6. Etching
6.1 Dry Etching
- LAM Research 495 -- LAM1
- Polysilicon and thin nitride (>500 nm) automated etch
- Etch Gases Available: SF6, Cl2, O2, He, C2F6
- LAM Research 490 -- LAM2
- Oxide and thick nitride automated etch
- Etch Gases Available: CF4, CHF3, O2, He, Ar
- Oxford Plasmalab 80 Plus
- Etch gases available:
- Oxford 100 ICP DRIE
- Etch gases available:
- Technics PEII-A
- Etch gases available: SF6,O2
- March Plasmod
- Etch gases available: O2
- Xactix Xetch Xenon Diflouride Etcher
- Selective Silicon isotropic dry etch
6.2 Wet Etching
- 5 wet chemical (acids and bases) processing stations with neutralization tank
- KOH etch station with temperature controlled bath
- Etch Chemicals Available: HF, BOE, HCl, Al Etch, Au Etch, Cr Etch, Phosphoric Acid, Nitric Acid, Sulfuric Acid, H2O2, NaOH, KOH
- Etchant Recipes A-Z
- Etch rates for micromachining processing, Part I
- Williams et. al, 1996
- Etch rates for micormachining processing, Part II
- Williams et. al, 2003